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| SUD30N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES ID (A) 30a 30a rDS(on) (W) 0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Order Number: SUD30N04-10 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 30a 30a 120 50 125 97c - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountd Junction-to-Ambient J ti t A bi t Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. Surface mounted on 1" FR4 board. Document Number: 70782 S-31724--Rev. D, 18-Aug-03 www.vishay.com Free Air RthJA RthJC Symbol Typical 45 110 1.5 Maximum 55 125 1.8 Unit _C/W C/W 1 SUD30N04-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 10 A VGS = 4.5 V, ID = 10 A, TJ = 125_C VGS = 4.5 V, ID = 10 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 30 0.085 0.014 0.0185 0.0115 0.0195 0.025 57 0.010 0.017 0.022 0.014 0.024 0.031 S W 40 1 3 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 0.5 W ID ] 30 A, VGEN = 10 V, RG = 2.5 W 1 14 13 45 25 VDS = 15 V, VGS = 10 V, ID = 30 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2700 600 160 50 9 11 3.6 30 30 90 50 ns W 100 nC pF Source-Drain Ciode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr 25_C)b 30 120 IF = 30 A, VGS = 0 V IF = 30 A, di/dt = 100 A/ms 0.90 50 1.50 100 A V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70782 S-31724--Rev. D, 18-Aug-03 SUD30N04-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10, 9, 8, 7, 6 V 5V I D - Drain Current (A) 120 Transfer Characteristics 90 I D - Drain Current (A) 90 60 4V 30 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 60 30 TC = 125_C 25_C - 55_C 3 4 5 6 0 0 1 2 VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = - 55_C r DS(on) - On-Resistance ( ) 80 g fs - Transconductance (S) 25_C 125_C 60 0.030 0.025 0.020 0.015 0.010 0.005 0.000 0 30 60 90 120 0 On-Resistance vs. Drain Current VGS = 4.5 V VGS = 10 V 40 20 0 VGS - Gate-to-Source Voltage (V) 4000 20 40 60 80 100 ID - Drain Current (A) 10 VGS = 15 V ID = 30 A Capacitance Gate Charge 3200 C - Capacitance (pF) Ciss V GS - Gate-to-Source Voltage (V) 8 2400 6 1600 Coss Crss 4 800 2 0 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Document Number: 70782 S-31724--Rev. D, 18-Aug-03 www.vishay.com 3 SUD30N04-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance ( ) (Normalized) 2.0 TJ = 150_C TJ = 25_C 10 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 40 Safe Operating Area 200 100 Limited by rDS(on) 10 ms 100 ms I D - Drain Current (A) 10 30 I D - Drain Current (A) 20 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 10 1 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.1 0.1 1 10 50 VDS - Drain-to-Source Voltage (V) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.05 0.02 Single Pulse 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 3 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70782 S-31724--Rev. D, 18-Aug-03 4 |
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